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IRFZ24VSTRRPBF

更新时间： 2024-11-28 12:59:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	362K
描述
Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRFZ24VSTRRPBF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.59	Base Number Matches：	1

IRFZ24VSTRRPBF 数据手册

PD - 9.891A

IRFZ24S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRFZ24S)

l Low-profile through-hole (IRFZ24L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 60V

R_DS(on)= 0.10Ω

I_D= 17A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ24L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.7

Power Dissipation

Linear Derating Factor

0.40

± 20

100

4.5

W/°C

V_GS

E_AS

dv/dt

T_J

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

2.5

Units

R_θJC

R_θJA

°C/W

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

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与IRFZ24VSTRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ25	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 14A I(D) \| TO-220AB
IRFZ25-001	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-002	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-003	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-004	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-005	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ25-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta

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