IRFZ24VL

更新时间： 2024-11-28 03:37:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	125K
描述
HEXFET Power MOSFET

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IRFZ24VL 数据手册

PD - 94182

IRFZ24VS

IRFZ24VL

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 60mΩ

l Fully Avalanche Rated

l Optimized for SMPS Applications

I_D= 17A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRFZ24VS

TO-262

IRFZ24VL

Thethrough-holeversion(IRFZ24VL)isavailableforlow-profileapplications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_C= 25°C

0.29

W/°C

Linear Derating Factor

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.4

V/ns

4.2

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.4

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB Mounted)**

–––

www.irf.com

02/14/02

12 3 4 5 6 7...10

中文翻译

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