PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ24NS)
l Low-profilethrough-hole(IRFZ24NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.07Ω
G
l Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-holeversion(IRFZ24NL)isavailableforlow-
profileapplications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
17
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
12
A
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
45
W
W
Power Dissipation
Linear Derating Factor
0.30
± 20
71
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
10
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
4.5
6.8
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
Max.
3.3
40
Units
RθJC
RθJA
°C/W
–––
9/22/97