是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-257AB |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.14 | Is Samacsys: | N |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AB | JESD-30 代码: | S-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFY230CM | INFINEON |
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Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc | |
IRFY230CMPBF | INFINEON |
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Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc | |
IRFY230CMSCXPBF | INFINEON |
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Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc | |
IRFY230SM | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | CHIP | |
IRFY240 | SEME-LAB |
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N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |
IRFY240(M)PBF | INFINEON |
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Power Field-Effect Transistor, 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFY240_11 | SEME-LAB |
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N-CHANNEL POWER MOSFET | |
IRFY240C | INFINEON |
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POWER MOSFET THRU-HOLE (TO-257AA | |
IRFY240C | SEME-LAB |
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N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. | |
IRFY240CM | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A) |