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IRFS9533 PDF预览

IRFS9533

更新时间: 2024-11-05 19:05:03
品牌 Logo 应用领域
三星 - SAMSUNG 局域网晶体管
页数 文件大小 规格书
1页 27K
描述
Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

IRFS9533 技术参数

生命周期:Obsolete零件包装代码:TO-220F
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

IRFS9533 数据手册

  

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Advanced Power MOSFET