生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 170 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 10.7 A |
最大漏极电流 (ID): | 10.7 A | 最大漏源导通电阻: | 0.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 76 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 32 ns |
最大开启时间(吨): | 45 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS9541 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 10.7A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Met | |
IRFS9542 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met | |
IRFS9543 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
IRFS9620 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
IRFS9621 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 150V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
IRFS9622 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal | |
IRFS9623 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 150V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal | |
IRFS9630 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.8ohm, 1-Element, P-Channel, Silicon, Met | |
IRFS9630 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFS9631 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 150V, 1.8ohm, 1-Element, P-Channel, Silicon, Met |