IRFS9N60A, SiHFS9N60A
Vishay Siliconix
Power MOSFET
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
600
Available
RDS(on) (Ω)
VGS = 10 V
0.75
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
COMPLIANT
Qg (Max.) (nC)
49
13
20
Q
Q
gs (nC)
gd (nC)
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
Configuration
Single
D
APPLICATIONS
D2PAK (TO-263)
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
G
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
D
G
S
N-Channel MOSFET
S
• Main Switch
ORDERING INFORMATION
Package
D2PAK (TO-263)
IRFS9N60APbF
D2PAK (TO-263)
D2PAK (TO-263)
IRFS9N60ATRRPbFa
SiHFS9N60ATR-E3a
IRFS9N60ATRRa
SiHFS9N60ATRa
IRFS9N60ATRLPbFa
SiHFS9N60ATL-E3a
IRFS9N60ATRLa
SiHFS9N60ATLa
Lead (Pb)-free
SiHFS9N60A-E3
IRFS9N60A
SnPb
SiHFS9N60A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
9.2
TC = 25 °C
TC =100°C
Continuous Drain Current
VGS at 10 V
ID
5.8
A
Pulsed Drain Currenta
IDM
37
Linear Derating Factor
1.3
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
290
9.2
EAR
17
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
170
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
5.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12).
c. ISD ≤ 9.2 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91287
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
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