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IRFS9N60APBF PDF预览

IRFS9N60APBF

更新时间: 2024-02-05 06:19:34
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 166K
描述
Power MOSFET

IRFS9N60APBF 数据手册

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IRFS9N60A, SiHFS9N60A  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Gate Charge Qg results in Simple Drive  
Requirement  
PRODUCT SUMMARY  
VDS (V)  
600  
Available  
RDS(on) (Ω)  
VGS = 10 V  
0.75  
RoHS*  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
COMPLIANT  
Qg (Max.) (nC)  
49  
13  
20  
Q
Q
gs (nC)  
gd (nC)  
• Fully Characterized Capacitance and Avalanche Voltage  
and Current  
• Lead (Pb)-free Available  
Configuration  
Single  
D
APPLICATIONS  
D2PAK (TO-263)  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
G
APPLICABLE OFF LINE SMPS TOPOLOGIES  
• Active Clamped Forward  
D
G
S
N-Channel MOSFET  
S
• Main Switch  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRFS9N60APbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
IRFS9N60ATRRPbFa  
SiHFS9N60ATR-E3a  
IRFS9N60ATRRa  
SiHFS9N60ATRa  
IRFS9N60ATRLPbFa  
SiHFS9N60ATL-E3a  
IRFS9N60ATRLa  
SiHFS9N60ATLa  
Lead (Pb)-free  
SiHFS9N60A-E3  
IRFS9N60A  
SnPb  
SiHFS9N60A  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
30  
9.2  
TC = 25 °C  
TC =100°C  
Continuous Drain Current  
VGS at 10 V  
ID  
5.8  
A
Pulsed Drain Currenta  
IDM  
37  
Linear Derating Factor  
1.3  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
290  
9.2  
EAR  
17  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
170  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12).  
c. ISD 9.2 A, dI/dt 50 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91287  
S-Pending-Rev. A, 22-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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