型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR9210TRLPBF | VISHAY |
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Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal | |
IRFR9210TRPBF | VISHAY |
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Power MOSFET | |
IRFR9210TRPBFA | KERSEMI |
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Power MOSFET | |
IRFR9210TRR | INFINEON |
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Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal | |
IRFR9210TRRPBF | VISHAY |
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Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal | |
IRFR9211 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-252AA | |
IRFR9212 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.6A I(D) | TO-252AA | |
IRFR9212-T1 | SAMSUNG |
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Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Met | |
IRFR9212TR | INFINEON |
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Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Met | |
IRFR9214 | VISHAY |
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Power MOSFET |