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IRFR9214TRR PDF预览

IRFR9214TRR

更新时间: 2024-11-09 19:57:31
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 279K
描述
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR9214TRR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
其他特性:AVALANCHE RATED雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):2.7 A
最大漏极电流 (ID):2.7 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):11 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR9214TRR 数据手册

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PD - 95375A  
IRFR/U9214PbF  
HEXFET® Power MOSFET  
D
l P-Channel  
VDSS = -250V  
l Surface Mount (IRFR9214)  
l Straight Lead (IRFU9214)  
l Advanced Process Technology  
l Fast Switching  
RDS(on) = 3.0Ω  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = -2.7A  
S
Description  
Third Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve low  
on-resistance per silicon area. This benefit, combined  
with the fast switching speed and ruggedized device  
design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in a wide variety of applications.  
D-Pak  
I-Pak  
TO-251AA  
TO-252AA  
The D-Pak is designed for surface mounting using vapor  
phase, infrared, orwavesolderingtechniques. Thestraight  
lead version (IRFU series) is for through-hole mounting  
applications. Power dissipation levels up to 1.5 watts are  
possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-2.7  
-1.7  
-11  
A
PD @TC = 25°C  
Power Dissipation  
50  
W
W/°C  
V
Linear Derating Factor  
0.40  
± 20  
100  
-2.7  
5.0  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
-5.0  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
260 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
2.5  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)**  
Junction-to-Ambient  
50  
°C/W  
110  
12/07/04  
Document Number: 91282  
www.vishay.com  
1

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