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IRFR92209A PDF预览

IRFR92209A

更新时间: 2024-09-16 21:15:47
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关晶体管
页数 文件大小 规格书
8页 99K
描述
3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRFR92209A 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.08外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):3.6 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR92209A 数据手册

 浏览型号IRFR92209A的Datasheet PDF文件第2页浏览型号IRFR92209A的Datasheet PDF文件第3页浏览型号IRFR92209A的Datasheet PDF文件第4页浏览型号IRFR92209A的Datasheet PDF文件第5页浏览型号IRFR92209A的Datasheet PDF文件第6页浏览型号IRFR92209A的Datasheet PDF文件第7页 
IRFR9220, IRFU9220  
Data Sheet  
July 1999  
File Number 4015.3  
3.6A, 200V, 1.500 Ohm, P-Channel Power  
MOSFETs  
Features  
• 3.6A, 200V  
These are advanced power MOSFETs designed, tested, and  
guaranteed to withstand a specific level of energy in the  
avalanche breakdown mode of operation. These are  
P-Channel enhancement-mode silicon gate power field-  
effect transistors designed for applications such as switching  
regulators, switching converters, motor drivers, relay drivers,  
and drivers for high-power bipolar switching transistors  
requiring high speed and low gate-drive power. These types  
can be operated directly from integrated circuits.  
• rDS(ON) = 1.500Ω  
®
Temperature Compensating PSPICE Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17502.  
Symbol  
Ordering Information  
D
PART NUMBER  
PACKAGE  
TO-252AA  
TO-251AA  
BRAND  
IF9220  
IF9220  
IRFR9220  
G
IRFU9220  
NOTE: When ordering use the entire part number. Add the suffix 9A  
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
GATE  
GATE  
SOURCE  
DRAIN (FLANGE)  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
PSPICE® is a registered trademark of MicroSim Corporation.  
4-89  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

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Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met