Datasheet > IRFR9220TRA

IRFR9220TRA

更新时间： 2024-11-06 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4558K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR9220TRA 数据手册

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

1.5

RoHS*

• Surface Mount (IRFR9220/SiHFR9220)

• Straight Lead (IRFUFU9220/SiHFU9220)

• Available in Tape and Reel

• P-Channel

Q_g(Max.) (nC)

3.3

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third Power MOSFETs technology is the key to Vishay

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9220PbF

SiHFR9220-E3

IRFR9220

DPAK (TO-252)

IIRFR9220TRLPbF^a

SiHFR9220TL-E3^a

IRFR9220TRL^a

DPAK (TO-252)

IRFR9220TRRPbF^a

SiHFR9220TR-E3^a

IRFR9220TRR^a

SiHFR9220TR^a

DPAK (TO-252)

IRFR9220TRPbF^a

SiHFR9220T-E3^a

IRFR9220TR^a

IPAK (TO-251)

IRFU9220PbF

SiHFU9220-E3

IRFU9220

Lead (Pb)-free

SnPb

SiHFR9220

SiHFR9220TL^a

SiHFR9220T^a

SiHFU9220

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 3.6

- 2.3

- 14

0.33

0.020

310

Continuous Drain Current

V_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

- 3.6

4.2

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

- 5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, Starting T_J= 25 °C, L = 35 mH, R_G= 25 Ω, I_AS= - 3.6 A (see fig. 12).

c. I_SD≤ - 3.9 A, dI/dt ≤ 95 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR9220TRA相关器件

型号	品牌	获取价格	描述	数据表
IRFR9220TRL	VISHAY	获取价格	Power MOSFET
IRFR9220TRL	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFR9220TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9220TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRFR9220TRPBF	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFR9220TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9220TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9220TRR	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFR9220TRR	VISHAY	获取价格	Power MOSFET
IRFR9220TRRA	KERSEMI	获取价格	Power MOSFET

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