Datasheet > IRFR9220, IRFU9220, SiHFR9220, SiHFU9220

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220

更新时间： 2024-11-07 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	778K
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Power MOSFET

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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 数据手册

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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRFR9220, SiHFR9220)

• Straight lead (IRFUFU9220, SiHFU9220)

Available

• Available in tape and reel

• P-channel

• Fast switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

P-Channel MOSFET

PRODUCT SUMMARY

DESCRIPTION

V_DS(V)

-200

Third power MOSFETs technology is the key to Vishay

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

R_DS(on)(Ω)

V_GS= -10 V

1.5

Q_g(Max.) (nC)

3.3

_gs(nC)

_gd(nC)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

SiHFR9220-GE3

SiHFR9220TRL-GE3 ^aSiHFR9220TRR-GE3 ^aSiHFR9220TR-GE3 ^aSiHFU9220-GE3

Lead (Pb)-free and

halogen-free

IRFR9220PbF-BE3 IRFR9220TRPbF-BE3

IRFR9220PbF

IRFR9220TRLPbF^a

Lead (Pb)-free

IRFR9220TRRPbF^a

IRFR9220TRPbF^a

IRFU9220PbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-200

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

-3.6

Continuous drain current

V_GSat -10 V

I_D

T_C= 100 °C

-2.3

Pulsed drain current ^a

I_DM

-14

Linear derating factor

0.33

0.020

310

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

-3.6

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

-5.0

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= - 50 V, Starting T_J= 25 °C, L = 35 mH, R_g= 25 Ω, I_AS= - 3.6 A (see fig. 12)

c. I_SD≤ - 3.9 A, dI/dt ≤ 95 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0373-Rev. F, 19-Apr-2021

Document Number: 91283

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR9220, IRFU9220, SiHFR9220, SiHFU9220相关器件

型号	品牌	获取价格	描述	数据表
IRFR92209A	RENESAS	获取价格	3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9220PBF	KERSEMI	获取价格	Power MOSFET
IRFR9220PBF	VISHAY	获取价格	Power MOSFET
IRFR9220PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFR9220TR	VISHAY	获取价格	Power MOSFET
IRFR9220TR	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFR9220TRA	KERSEMI	获取价格	Power MOSFET
IRFR9220TRL	VISHAY	获取价格	Power MOSFET
IRFR9220TRL	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFR9220TRLA	KERSEMI	获取价格	Power MOSFET

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