Datasheet > IRFR9214TRLPBF

IRFR9214TRLPBF

更新时间： 2024-11-06 19:58:31

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	255K
描述
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRFR9214TRLPBF 数据手册

PD - 95375A

IRFR/U9214PbF

HEXFET^®Power MOSFET

l P-Channel

V_DSS= -250V

l Surface Mount (IRFR9214)

l Straight Lead (IRFU9214)

l Advanced Process Technology

l Fast Switching

R_DS(on)= 3.0Ω

l Fully Avalanche Rated

l Lead-Free

I_D= -2.7A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

D-Pak

I-Pak

TO-251AA

TO-252AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-2.7

-1.7

-11

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.40

± 20

100

-2.7

5.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

260 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

2.5

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

12/07/04

12 3 4 5 6 7...10

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