Datasheet > IRFR9214TRLPBFA

IRFR9214TRLPBFA

更新时间： 2024-11-07 01:10:11

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	3394K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR9214TRLPBFA 数据手册

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• P-Channel

- 250

Available

• Surface Mount (IRFR9214/SiHFR9214)

R_DS(on)(Ω)

V_GS= - 10 V

3.0

• Straight Lead (IRFU9214/SiHFU9214)

• Advanced Process Technology

• Fast Switching

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.1

_gs(nC)

_gd(nC)

6.8

• Fully Avalanche Rated

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

DPAK

(TO-252)

IPAK

(TO-251)

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9214TRPbF^a

SiHFR9214T-E3^a

IRFR9214TR^a

IPAK (TO-251)

IRFU9214PbF

SiHFU9214-E3

IRFU9214

IRFR9214PbF

SiHFR9214-E3

IRFR9214

IRFR9214TRLPbF^a

SiHFR9214TL-E3^a

IRFR9214TRL^a

Lead (Pb)-free

SnPb

SiHFR9214

SiHFR9214TL^a

SiHFR9214T^a

SiHFU9214

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 250

V_GS

T_C= 25 °C

T_C=100°C

- 2.7

Continuous Drain Current

V_GSat - 10 V

I_D

- 1.7

- 11

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

100

- 2.7

E_AR

5.0

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

260^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR9214TRLPBFA相关器件

型号	品牌	获取价格	描述	数据表
IRFR9214TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9214TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9214TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9214TRR	VISHAY	获取价格	Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9214TRR	INFINEON	获取价格	Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9214TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9214TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9220	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
IRFR9220	VISHAY	获取价格	Power MOSFET
IRFR9220	KERSEMI	获取价格	Power MOSFET

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