Datasheet > IRFR9210TR

IRFR9210TR

更新时间： 2024-09-15 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关
页数	文件大小	规格书
7页	4098K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR9210TR 数据手册

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

3.0

RoHS*

• Surface Mount (IRFR9210/SiHFR9210)

• Straight Lead (IRFU9210/SiHFU9210)

• Available in Tape and Reel

• P-Channel

Q_g(Max.) (nC)

8.9

2.1

COMPLIANT

_gs(nC)

_gd(nC)

3.9

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

IRFU9210PbF

SiHFU9210-E3

IRFU9210

IRFR9210PbF

SiHFR9210-E3

IRFR9210

IRFR9210TRPbF^a

SiHFR9210T-E3^a

IRFR9210TR^a

Lead (Pb)-free

IRFR9210TRL^a

SiHFR9210TL^a

SnPb

SiHFR9210

SiHFR9210T^a

SiHFU9210

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 200

T_C= 25 °C

T_C=100°C

- 1.9

- 1.2

- 7.6

0.20

0.020

300

Continuous Drain Current

_GSat - 10 V

I_D

Pulsed Drain Current^a

Linear Derating Factor

I_DM

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

E_AR

- 1.9

2.5

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

T_A= 25 °C

2.5

P_D

V/ns

°C

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, starting T_J= 25 °C, L = 124 mH, R_G= 25 Ω, I_AS= - 1.9 A (see fig. 12).

c. I_SD≤ - 1.9 A, dI/dt ≤ 70 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR9210TR相关器件

型号	品牌	获取价格	描述	数据表
IRFR9210TRA	KERSEMI	获取价格	Power MOSFET
IRFR9210TRL	KERSEMI	获取价格	Power MOSFET
IRFR9210TRL	VISHAY	获取价格	Power MOSFET
IRFR9210TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9210TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9210TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9210TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9210TRR	INFINEON	获取价格	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9210TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
IRFR9211	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 2A I(D) \| TO-252AA

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