IRFP150

更新时间： 2024-11-08 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	136K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

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数据手册

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IRFP150 数据手册

PD- 91503C

IRFP150N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 100V

_DS(on)= 0.036W

l Fully Avalanche Rated

I_D= 42A

Description

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels

preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package

because of its isolated mounting hole.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢀ

140

160

1.1

± 20

420

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Currentꢀ

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_qJC

R_qCS

R_qJA

0.95

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

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