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IRFP150PBF

更新时间: 2024-11-09 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1450K
描述
Power MOSFET

IRFP150PBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-247AC
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:0.69
Is Samacsys:N其他特性:AVALANCHE RATED, FAST SWITCHING
雪崩能效等级(Eas):830 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):41 A
最大漏源导通电阻:0.055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):180 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP150PBF 数据手册

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IRFP150, SiHFP150  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Dynamic dV/dt Rating  
100  
• Repetitive Avalanche Rated  
• Isolated Central Mounting Hole  
• 175 °C Operating Temperature  
• Fast Switching  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.055  
RoHS*  
Qg (Max.) (nC)  
140  
29  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
68  
Configuration  
Single  
D
TO-247  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-247 package is preferred for commercial-industrial  
applications where higher power levels preclude the use of  
TO-220 devices. The TO-247 is similar but superior to the  
earlier TO-218 package because its isolated mounting hole.  
It also provides greater creepage distances between pins to  
meet the requirements of most safety specifications.  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-247  
IRFP150PbF  
SiHFP150-E3  
IRFP150  
Lead (Pb)-free  
SnPb  
SiHFP150  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
V
VGS  
20  
T
C = 25 °C  
41  
29  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
A
Pulsed Drain Currenta  
IDM  
160  
Linear Derating Factor  
1.5  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
830  
41  
EAR  
19  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
230  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 740 µH, RG = 25 Ω, IAS = 41 A (see fig. 12).  
c. ISD 41 A, dI/dt 300 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91203  
S-81369-Rev. A, 07-Jul-08  
www.vishay.com  
1

IRFP150PBF 替代型号

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