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IRFP150V PDF预览

IRFP150V

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 521K
描述
HEXFET Power MOSFET

IRFP150V 数据手册

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PD - 94459A  
IRFP150V  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 100V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 24mΩ  
G
l Fully Avalanche Rated  
ID = 47A  
S
Description  
Advanced HEXFET® Power MOSFETs from International Rectifier utilize  
advanced processing techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well known  
for, provides the designer with an extremely efficient and reliable device for  
use in a wide variety of applications.  
The TO-247 package is preferred for commercial-industrial applications  
wherehigherpowerlevelsprecludetheuseofTO-220devices. TheTO-247  
is similar but superior to the earlier TO-218 packcage because of its isolated  
mounting hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
46  
32  
A
230  
PD @TC = 25°C  
Power Dissipation  
140  
W
W/°C  
V
Linear Derating Factor  
0.91  
VGS  
IAR  
Gate-to-Source Voltage  
20  
Avalanche Current  
28  
20  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.8  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.24  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.1  
–––  
40  
°C/W  
www.irf.com  
1
02/03/03  

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