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IRFP150A

更新时间: 2024-11-23 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 262K
描述
Advanced Power MOSFET

IRFP150A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.95
Is Samacsys:N雪崩能效等级(Eas):740 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):43 A最大漏极电流 (ID):43 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):193 W
最大脉冲漏极电流 (IDM):170 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP150A 数据手册

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IRFP150A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.04  
ID = 43 A  
Improved Gate Charge  
Extended Safe Operating Area  
TO-3P  
O
175 C Operating Temperature  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
1
2
3
Lower RDS(ON) : 0.032  
(Typ.)  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
100  
43  
O
Continuous Drain Current (TC=25  
)
C
ID  
A
O
Continuous Drain Current (TC=100  
Drain Current-Pulsed  
)
C
30.4  
170  
IDM  
VGS  
EAS  
IAR  
1
A
V
O
+
_
Gate-to-Source Voltage  
20  
2
O
Single Pulsed Avalanche Energy  
Avalanche Current  
740  
43  
mJ  
A
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
19.3  
6.5  
O
3
Peak Diode Recovery dv/dt  
O
O
Total Power Dissipation (T =25  
)
W
193  
1.28  
C
C
PD  
TJ , TSTG  
TL  
O
Linear Derating Factor  
W/  
C
Operating Junction and  
Storage Temperature Range  
- 55 to +175  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
0.78  
--  
Units  
R q  
--  
0.24  
--  
JC  
O
R q  
C
/W  
CS  
R q  
Junction-to-Ambient  
40  
JA  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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