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IRFP150 PDF预览

IRFP150

更新时间: 2024-11-23 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 262K
描述
Advanced Power MOSFET

IRFP150 数据手册

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IRFP150A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.04  
ID = 43 A  
Improved Gate Charge  
Extended Safe Operating Area  
TO-3P  
O
175 C Operating Temperature  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
1
2
3
Lower RDS(ON) : 0.032  
(Typ.)  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
100  
43  
O
Continuous Drain Current (TC=25  
)
C
ID  
A
O
Continuous Drain Current (TC=100  
Drain Current-Pulsed  
)
C
30.4  
170  
IDM  
VGS  
EAS  
IAR  
1
A
V
O
+
_
Gate-to-Source Voltage  
20  
2
O
Single Pulsed Avalanche Energy  
Avalanche Current  
740  
43  
mJ  
A
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
19.3  
6.5  
O
3
Peak Diode Recovery dv/dt  
O
O
Total Power Dissipation (T =25  
)
W
193  
1.28  
C
C
PD  
TJ , TSTG  
TL  
O
Linear Derating Factor  
W/  
C
Operating Junction and  
Storage Temperature Range  
- 55 to +175  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
0.78  
--  
Units  
R q  
--  
0.24  
--  
JC  
O
R q  
C
/W  
CS  
R q  
Junction-to-Ambient  
40  
JA  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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