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IRFHS9301TRPBF PDF预览

IRFHS9301TRPBF

更新时间: 2024-10-28 11:09:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 322K
描述
HEXFET Power MOSFET

IRFHS9301TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:2 X 2 MM, HALOGEN FREE AND ROHS COMPLAINT, PLASTIC, QFN-6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.71外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6 A最大漏源导通电阻:0.037 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N6
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFHS9301TRPBF 数据手册

 浏览型号IRFHS9301TRPBF的Datasheet PDF文件第2页浏览型号IRFHS9301TRPBF的Datasheet PDF文件第3页浏览型号IRFHS9301TRPBF的Datasheet PDF文件第4页浏览型号IRFHS9301TRPBF的Datasheet PDF文件第6页浏览型号IRFHS9301TRPBF的Datasheet PDF文件第7页浏览型号IRFHS9301TRPBF的Datasheet PDF文件第8页 
IRFHS9301TR/TR2PbF  
100  
80  
60  
40  
20  
100  
I
= -7.8A  
D
Vgs = -4.5V  
80  
60  
T
= 125°C  
J
40  
Vgs = -10V  
T
= 25°C  
5
J
20  
0
10  
15  
20  
0
5
10  
15  
20  
25  
30  
-I , Drain Current (A)  
D
-V  
GS,  
Gate -to -Source Voltage (V)  
Fig 13. Typical On-Resistance vs. Drain Current  
Fig 12. On-Resistance vs. Gate Voltage  
600  
500  
400  
300  
200  
100  
0
1E-5  
1E-4  
1E-3  
1E-2  
1E-1  
1E+0  
Time (sec)  
Fig 14. Typical Power vs. Time  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
D.U.T *  
+
ƒ
-
*
=10V  
V
GS  
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
di/dt controlled by RG  
Re-Applied  
Voltage  
RG  
+
-
Driver same type as D.U.T.  
Body Diode  
Inductor Current  
Forward Drop  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
* Reverse Polarity of D.U.T for P-Channel  
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs  
www.irf.com  
5

IRFHS9301TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFHS9301TR2PBF INFINEON

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