是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.55 |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 43 A |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI1010G-011 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-011PBF | INFINEON |
获取价格 |
43A, 55V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFI1010G-012 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-013 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-015 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-015PBF | INFINEON |
获取价格 |
43A, 55V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFI1010G-017 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-018 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-019 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFI1010G-019PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta |