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IRFI1010G-002 PDF预览

IRFI1010G-002

更新时间: 2023-01-03 04:22:28
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 47K
描述
Power Field-Effect Transistor, 43A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI1010G-002 数据手册

  

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