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IRFHM8337TRPBF PDF预览

IRFHM8337TRPBF

更新时间: 2024-10-28 19:57:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 593K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

IRFHM8337TRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, S-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.9
雪崩能效等级(Eas):13 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.0124 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):94 A子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFHM8337TRPBF 数据手册

 浏览型号IRFHM8337TRPBF的Datasheet PDF文件第2页浏览型号IRFHM8337TRPBF的Datasheet PDF文件第3页浏览型号IRFHM8337TRPBF的Datasheet PDF文件第4页浏览型号IRFHM8337TRPBF的Datasheet PDF文件第5页浏览型号IRFHM8337TRPBF的Datasheet PDF文件第6页浏览型号IRFHM8337TRPBF的Datasheet PDF文件第7页 
IRFHM8337TRPbF  
HEXFET® Power MOSFET  
VDSS  
30  
V
RDS(on) max  
(@ VGS = 10V)  
12.4  
m  
(@ VGS = 4.5V)  
17.9  
5.4  
Qg (typical)  
nC  
A
ID  
18  
(@TC = 25°C)  
Applications  
System/load switch,  
Charge or discharge switch for battery protection  
Features  
Benefits  
Low Thermal Resistance to PCB (< 5.0°C/W)  
Low Profile (<1.05 mm)  
Enable better Thermal Dissipation  
Increased Power Density  
Multi-Vendor Compatibility  
Easier Manufacturing  
results in  
Industry-Standard Pinout  
  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1,Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
4000  
IRFHM8337PbF  
PQFN 3.3mm x 3.3mm  
Tape and Reel  
IRFHM8337TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
± 20  
12  
Units  
VGS  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
9.4  
94  
35  
22  
A
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
(Source Bonding Technology Limited)  
Power Dissipation   
18  
PD @TA = 25°C  
2.8  
25  
W
PD @TC(Bottom) = 25°C  
Power Dissipation   
Linear Derating Factor   
Operating Junction and  
Storage Temperature Range  
0.02  
W/°C  
°C  
TJ  
-55 to + 150  
TSTG  
Notes through are on page 8  
1
2016-2-23  

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