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IRFF9120 PDF预览

IRFF9120

更新时间: 2024-11-20 22:31:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 63K
描述
4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

IRFF9120 数据手册

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IRFF9120  
Data Sheet  
June 1999  
File Number 2287.2  
4A, 100V, 0.60 Ohm, P-Channel Power  
MOSFET  
Features  
• 4A, 100V  
This P-Channel enhancement mode silicon gate power  
field effect transistor is designed for applications such as  
switching regulators, switching converters, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
= 0.60  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power-Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA17501.  
Symbol  
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
IRFF9120  
D
IRFF9120  
TO-205AF  
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
JEDEC TO-205AF  
SOURCE  
DRAIN  
(CASE)  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-94  

IRFF9120 替代型号

型号 品牌 替代类型 描述 数据表
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