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IRFAC42 PDF预览

IRFAC42

更新时间: 2024-11-24 22:24:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 71K
描述
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

IRFAC42 数据手册

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IRFAC40,  
IRFAC42  
Semiconductor  
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,  
N-Channel Power MOSFETs  
January 1998  
• 6.2A and 5.4A, 600V  
• r = 1.2and 1.6Ω  
Description  
DS(ON)  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching conver-  
tors, motor drivers, relay drivers, and drivers for high power  
bipolar switching transistors requiring high speed and low  
gate drive power. These types can be operated directly from  
integrated circuits.  
• Repetitive Avalanche Energy Rated  
• Simple Drive Requirements  
• Ease of Paralleling  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA17426.  
Ordering Information  
PART NUMBER  
IRFAC40  
IRFAC42  
PACKAGE  
TO-204AA  
BRAND  
IRFAC40  
IRFAC42  
Symbol  
TO-204AA  
D
NOTE: When ordering, include the entire part number.  
G
S
Packaging  
JEDEC TO-204AA  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 2156.2  
Copyright © Harris Corporation 1997  
5-1  

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