Datasheet > IRFAF40

IRFAF40

更新时间： 2024-09-15 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	154K
描述
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 900V, N-CHANNEL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFAF40 数据手册

PD - 90581

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

IRFAF40

900V, N-CHANNEL

THRU-HOLE (TO-204AA/AE)

Product Summary

Part Number BVDSS RDS(on)

IRFAF40 900V 2.5Ω

4.3Α

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

TO-3

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 0V, T = 25°C

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

4.3

2.7

= 0V, T = 100°C

@ T = 25°C

125

W/°C

1.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

530

4.3

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

1.5

dv/dt

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

11.5(typical)

For footnotes refer to the last page

www.irf.com

01/24/01

12 3 4 5 6 7

中文翻译

下载PDF

与IRFAF40相关器件

型号	品牌	获取价格	描述	数据表
IRFAF42	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 3.9A I(D) \| TO-204AA
IRFAF50	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFAF52	ROCHESTER	获取价格	5.7A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRFAG20	ROCHESTER	获取价格	1.3A, 1000V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRFAG22	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 1.3A I(D) \| TO-204AA
IRFAG30	INFINEON	获取价格	HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAG30	ROCHESTER	获取价格	2.3A, 1000V, 6.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-
IRFAG40	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖T
IRFAG40	ROCHESTER	获取价格	3.9A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3,
IRFAG42	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 3.6A I(D) \| TO-204AA