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IRFAF50

更新时间: 2024-11-24 22:05:27
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页数 文件大小 规格书
7页 150K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

IRFAF50 数据手册

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PD - 90577  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
IRFAF50  
900V, N-CHANNEL  
THRU-HOLE (TO-204AA/AE)  
Product Summary  
Part Number BVDSS RDS(on)  
IRFAF50 900V 1.6Ω  
ID  
6.2Α  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance; superior re-  
verse energy and diode recovery dv/dt capability.  
TO-3  
The HEXFET transistors also feature all of the well estab-  
lished advantages of MOSFETs such as voltage control,  
very fast switching, ease of paralleling and temperature  
stability of the electrical parameters.  
Features:  
n
n
n
n
n
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
They are well suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 0V, T = 25°C  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
6.2  
4.0  
D
GS  
C
A
I
D
= 0V, T = 100°C  
C
GS  
I
25  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
870  
mJ  
AS  
I
6.2  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
AR  
dv/dt  
1.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
11.5(typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/24/01  

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