Datasheet > IRF9910PBF_08

IRF9910PBF_08

更新时间： 2024-02-18 11:07:24

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
10页	299K
描述
Dual SO-8 MOSFET for POL Low Gate Charge

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中文翻译

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数据手册

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IRF9910PBF_08 数据手册

PD - 95728A

IRF9910PbF

HEXFET^®Power MOSFET

Applications

V_DSS

20V Q1

I_D

R_DS(on)max

l Dual SO-8 MOSFET for POL

converters in desktop, servers,

graphics cards, game consoles

and set-top box

13.4m @V_GS= 10V

10A

12A

9.3m @V_GS= 10V

l Lead-Free

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

SO-8

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

8.3

9.9

@ T_A= 70°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

Operating Junction and

0.016

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

62.5

Notes through ꢀ are on page 10

www.irf.com

07/23/08

12 3 4 5 6 7...10

中文翻译

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