Datasheet > IRF9952QPBF_10

IRF9952QPBF_10

更新时间： 2024-09-28 12:36:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	269K
描述
HEXFETPOWERMOSFET

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IRF9952QPBF_10 数据手册

PD - 96115A

IRF9952QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS30V -30V

P-CHANNEL MOSFET

R_DS(on)0.10Ω 0.25Ω

Top View

Description

These HEXFET^®Power MOSFET's in a Dual SO-8

package utilize the lastest processing techniques to

achieve extremely low on-resistance per silicon

area. Additional features of these HEXFET Power

MOSFET's are a 150°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These benefits combine

tomakethisdesignanextremelyefficientandreliable

device for use in a wide variety of applications.

The efficient SO-8 package provides enhanced

thermal characteristics and dual MOSFET die

capability making it ideal in a variety of power

applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also

available in Tape & Reel.

SO-8

Symbol

Maximum

Units

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_A= 25°C

T_A= 70°C

3.5

2.8

-2.3

-1.8

-10

Continuous Drain Currentꢀ

I_D

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)

1.7

-1.3

T_A= 25°C

Maximum Power Dissipation ꢀ

T_A= 70°C

2.0

1.3

P_D

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

2.0

-1.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.25

V/ ns

°C

dv/dt

T_J,T_STG

5.0

-5.0

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient ꢀ

R_θJA

62.5

°C/W

www.irf.com

08/09/10

12 3 4 5 6 7...10

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