Datasheet > IRF9Z14

IRF9Z14

更新时间： 2024-12-01 14:54:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	131K
描述
Power MOSFET

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IRF9Z14 数据手册

IRF9Z14

Vishay Siliconix

www.vishay.com

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• P-channel

• 175 °C operating temperature

• Fast switching

TO-220AB

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

P-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

-60

_DS(on)(Ω)

V_GS= -10 V

0.50

DESCRIPTION

Q_gmax. (nC)

3.8

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

_gs(nC)

_gd(nC)

5.1

Configuration

Single

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF9Z14PbF

IRF9Z14PbF-BE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-60

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

-6.7

-4.7

-27

Continuous drain current

V_GSat 10 V

I_D

_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.29

140

W/°C

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

Maximum power dissipation

E_AS

I_AR

-6.7

4.3

E_AR

_C= 25 °C

P_D

Peak diode recovery dV/dt ^c

dV/dt

T_J, T_stg

-4.5

-55 to +175

300

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

°C

For 10 s

lbf · in

N · m

Mounting torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= -25 V, starting T_J= 25 °C, L = 3.6 mH, R_g= 25 Ω, I_AS= -6.7 A (see fig. 12)

c. I_SD≤ -6.7 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 175 °C

d. 1.6 mm from case

S21-0867-Rev. C, 16-Aug-2021

Document Number: 91088

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与IRF9Z14相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z14.24.34FPBF	VISHAY	获取价格	Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem
IRF9Z14.24.34FX	VISHAY	获取价格	Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem
IRF9Z14.24.34FXPBF	VISHAY	获取价格	Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem
IRF9Z14-009	INFINEON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z14-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z14-029	VISHAY	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z14L	VISHAY	获取价格	Power MOSFET
IRF9Z14LPBF	VISHAY	获取价格	Power MOSFET
IRF9Z14PBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = -60V , RDS(on) =
IRF9Z14S	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

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