是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.32 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 4.7 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 19 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9Z10PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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IRF9Z10STRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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IRF9Z12 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal- |
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IRF9Z12-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal- |
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IRF9Z14 | INFINEON |
获取价格 |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) |
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IRF9Z14 | VISHAY |
获取价格 |
Power MOSFET |
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IRF9Z14.24.34FPBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem |
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IRF9Z14.24.34FX | VISHAY |
获取价格 |
Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem |
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IRF9Z14.24.34FXPBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem |
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IRF9Z14-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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