Datasheet > IRF9Z14STRR

IRF9Z14STRR

更新时间： 2024-09-29 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	396K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6.7A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9Z14STRR 数据手册

PD - 9.911A

IRF9Z14S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF9Z14S)

l Low-profile through-hole (IRF9Z14L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= -60V

R_DS(on)= 0.50Ω

l P- Channel

l Fully Avalanche Rated

Description

I_D= -6.7A

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z14L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

-6.7

-4.7

-27

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.7

Power Dissipation

Linear Derating Factor

0.29

± 20

140

-6.7

4.3

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-4.5

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.5

Units

R_θJC

R_θJA

°C/W

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF9Z14STRR相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z14STRRPBF	VISHAY	获取价格	暂无描述
IRF9Z15	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-220AB
IRF9Z20	INFINEON	获取价格	P-CHANNEL 50 VOLT POWER MOSFETs
IRF9Z20	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETs
IRF9Z20, SiHF9Z20	VISHAY	获取价格	Power MOSFET
IRF9Z20-005	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z20-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z20PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z22	INFINEON	获取价格	P-CHANNEL 50 VOLT POWER MOSFETs
IRF9Z22	VISHAY	获取价格	Power MOSFET