IRF9Z14STRRPBF

更新时间： 2024-11-18 13:08:47

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	2454K
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IRF9Z14STRRPBF 数据手册

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Advanced Process Technology

- 60

• Surface Mount (IRF9Z14S/SiHF9Z14S)

Available

R_DS(on)(Ω)

V_GS= - 10 V

0.50

•

Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.8

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

5.1

• P-Channel

• Fully Avalanche Rated

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D²PAK is suitable

for high current applications because of is low internal

connection resistance and can dissipate up to 2.0 W in a

typical surface mount application.

P-Channel MOSFET

The through-hole version (IRF9Z14L/SiHF9Z14L) is

available for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF9Z14SPbF

SiHF9Z14S-E3

IRF9Z14S

D²PAK (TO-263)

IRF9Z14STRLPbF^a

SiHF9Z14STL-E3^a

IRF9Z14STRL^a

I²PAK (TO-262)

IRF9Z14LPbF

Lead (Pb)-free

SiHF9Z14L-E3

SnPb

SiHF9Z14S

SiHF9Z14STL^a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 60

_C= 25 °C

- 6.7

- 4.7

- 27

0.29

140

- 6.7

4.3

Continuous Drain Current^e

V_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

Repetiitive Avalanche Energy^a

E_AR

_C= 25 °C

3.7

Maximum Power Dissipation

P_D

T_A= 25 °C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91089

S-Pending-Rev. A, 02-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRF9Z14STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z15	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-220AB
IRF9Z20	INFINEON	获取价格	P-CHANNEL 50 VOLT POWER MOSFETs
IRF9Z20	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETs
IRF9Z20, SiHF9Z20	VISHAY	获取价格	Power MOSFET
IRF9Z20-005	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z20-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z20PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z22	INFINEON	获取价格	P-CHANNEL 50 VOLT POWER MOSFETs
IRF9Z22	VISHAY	获取价格	Power MOSFET
IRF9Z22	SAMSUNG	获取价格	Power Field-Effect Transistor, 8.9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Met

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