IRF9Z24L

更新时间： 2024-11-17 22:26:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	312K
描述
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

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IRF9Z24L 数据手册

PD - 9.912A

IRF9Z24S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF9Z24S)

l Low-profile through-hole (IRF9Z24L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= -60V

R_DS(on)= 0.28Ω

l P- Channel

l Fully Avalanche Rated

Description

I_D= -11A

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z24L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

-11

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

-7.7

-44

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.7

Power Dissipation

Linear Derating Factor

0.40

± 20

240

-11

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

6.0

V/ns

-4.5

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.5

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

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与IRF9Z24L相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z24LPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z24LPBF	VISHAY	获取价格	Power MOSFET
IRF9Z24N	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
IRF9Z24N	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C
IRF9Z24N-002	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met

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