IRF9Z24N

更新时间： 2024-10-01 22:26:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	110K
描述
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

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IRF9Z24N 数据手册

PD -9.1484B

IRF9Z24N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.175Ω

l P-Channel

l Fully Avalanche Rated

I_D= -12A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-12

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.5

-48

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-7.2

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.5

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

3.3

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

8/27/97

12 3 4 5 6 7 8

中文翻译

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IRF9Z24N 替代型号

型号	品牌	替代类型	描述	数据表
IRF9Z24NPBF	INFINEON	功能相似	HEXFET Power MOSFET
IRF9Z24	INFINEON	功能相似	POWER MOSFET

与IRF9Z24N相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z24N-002	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-005	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-009PBF	INFINEON	获取价格	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET
IRF9Z24N-010	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-010PBF	INFINEON	获取价格	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET

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