Datasheet > IRF9Z24N

IRF9Z24N

更新时间： 2024-10-03 17:15:11

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	544K
描述
种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C时）:-12A;Vgs(th)(V):±20;漏源导通电阻:175mΩ@-10V

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IRF9Z24N 数据手册

IRF9Z24

-55V P-Channel MOSFET

UUMWW

Description

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Features

ꢀ

V_DS(V) =-55V

I_D= -12A (V_GS= -10V)

^DS(ON)< 170mΩ (V_GS= -10V)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-12

-8.5

-48

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-7.2

4.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

3.3

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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与IRF9Z24N相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z24N-002	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-005	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-009PBF	INFINEON	获取价格	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET
IRF9Z24N-010	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24N-010PBF	INFINEON	获取价格	12A, 55V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET