IRF9Z24F

更新时间： 2024-10-02 13:08:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1815K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9Z24F 数据手册

IRF9Z24, SiHF9Z24

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Repetitive Avalanche Rated

• P-Channel

R_DS(on)(Ω)

V_GS= - 10 V

0.28

RoHS*

Q_g(Max.) (nC)

5.4

COMPLIANT

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9Z24PbF

SiHF9Z24-E3

IRF9Z24

Lead (Pb)-free

SnPb

SiHF9Z24

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

- 11

Continuous Drain Current

_GSat - 10 V

I_D

- 7.7

- 44

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.40

240

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 11

E_AR

6.0

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 4.5

- 55 to + 175

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 2.3 mH, R_G= 25 Ω, I_AS= - 11 A (see fig. 12).

c. I_SD≤ - 11 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91090

S-Pending-Rev. A, 20-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF9Z24F相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z24FPBF	VISHAY	获取价格	Power Field-Effect Transistor, 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z24FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z24FXPBF	VISHAY	获取价格	Power Field-Effect Transistor, 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z24FXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IRF9Z24L	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
IRF9Z24L	VISHAY	获取价格	Power MOSFET
IRF9Z24LPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z24LPBF	VISHAY	获取价格	Power MOSFET
IRF9Z24N	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
IRF9Z24N	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C

与IRF9Z24F相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF9Z24F

IRF9Z24F 数据手册

与IRF9Z24F相关器件

与IRF9Z24F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF9Z24F

IRF9Z24F 数据手册

与IRF9Z24F相关器件

与IRF9Z24F相关文章

您还可以找

您在本页遇到什么问题？