是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.12 | 其他特性: | AVALANCHE RATED, HIGH RELIABILITY |
雪崩能效等级(Eas): | 44 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 3.5 A |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MS-012AA |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF9956TR | INFINEON |
类似代替 ![]() |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
![]() |
IRF9956TRPBF | INFINEON |
类似代替 ![]() |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
![]() |
IRF9956PBF | INFINEON |
类似代替 ![]() |
HEXFET Power MOSFET |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9956PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
![]() |
IRF9956TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
![]() |
IRF9956TR | UMW |
获取价格 |
种类:N+N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25° |
![]() |
IRF9956TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
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IRF9D | ETC |
获取价格 |
Analog IC |
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IRF9S | ETC |
获取价格 |
Analog IC |
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IRF9Z10 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRF9Z10 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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IRF9Z10-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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IRF9Z10-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |
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