Datasheet > IRF9956TR

IRF9956TR

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	473K
描述
种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:2.2A;Vgs(th)(V):±20;漏源导通电阻:100mΩ@10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9956TR 数据手册

UMW

IRF9956

30V 2N-Channel MOSFET

Description

The SOP-8 has been modified through a

customizedeadframe for enhanced thermal

characteristics anamultiple-die capability making it

ideal in a variety ofpowerapplications. With these

improvements, multipledevices can be used in an

application with dramaticallyreduced board space.

The package is designed forvapor phase, infra red,

or wave soldering techniques.

Top View

Features

•

VDS (V) =30V

•

ID= 2.2A

(V = -10V)

RDS(ON) ＜ 100m

Ω(V

=-10V)

RDS(ON) ＜ 200 m

•

Ω(V

=-4.5V)

•

Generation V Technology

Ultra Low On-Resistance

•

Surface Mount

Very Low Gate Charge and

Switching Losses

Fully Avalanche Rated

Lead-Free

•

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

3.5

2.8

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

1.7

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Av alan c he Curren t

E_AS

I_AR

2.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

5.0

dv/dt

T_J,T_STG

V/ ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

下载PDF

与IRF9956TR相关器件

型号	品牌	获取价格	描述	数据表
IRF9956TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
IRF9D	ETC	获取价格	Analog IC
IRF9S	ETC	获取价格	Analog IC
IRF9Z10	INFINEON	获取价格	HEXFET Power MOSFET
IRF9Z10	VISHAY	获取价格	Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z10-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z10-011PBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z10-013	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z10PBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z10STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta