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IRF9952QPBF PDF预览

IRF9952QPBF

更新时间: 2024-09-28 02:57:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 281K
描述
HEXFET Power MOSFET

IRF9952QPBF 数据手册

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PD - 96115  
IRF9952QPbF  
HEXFET® Power MOSFET  
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Advanced Process Technology  
UltraLowOn-Resistance  
Dual N and P Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
150°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free  
N-CHANNEL MOSFET  
1
8
N-Ch P-Ch  
D1  
D1  
S1  
G1  
2
7
VDSS 30V -30V  
3
4
6
5
S2  
G2  
D2  
D2  
P-CHANNEL MOSFET  
RDS(on) 0.100.25Ω  
Top View  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package utilize  
the lastest processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features of these  
Automotive qualified HEXFET Power MOSFET's are a  
150°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating. These  
benefits combine to make this design an extremely efficient  
and reliable device for use in Automotive applications and  
a wide variety of other applications.  
SO-8  
The efficient SO-8 package provides enhanced thermal  
characteristics and dual MOSFET die capability making it  
ideal in a variety of power applications. This dual, surface  
mount SO-8 can dramatically reduce board space and is  
also available in Tape & Reel.  
Symbol  
Maximum  
Units  
N-Channel  
P-Channel  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
± 20  
V
TA = 25°C  
TA  
3.5  
70°C  
-2.3  
Continuous Drain Current  
ID  
=
2.8-1.8  
A
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)  
IDM  
IS  
16  
1.7  
-10  
-1.3  
TA = 25°C  
Maximum Power Dissipation ꢀ  
TA = 70°C  
2.0  
1.3  
PD  
W
Single Pulse Avalanche Energy  
Avalanche Current  
EAS  
IAR  
44  
57  
mJ  
A
2.0  
-1.3  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
EAR  
0.25  
mJ  
V/ ns  
°C  
dv/dt  
TJ,TSTG  
5.0  
-5.0  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Units  
Maximum Junction-to-Ambient ꢀ  
RθJA  
62.5  
°C/W  
www.irf.com  
1
07/23/07  

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