PD - 96115
IRF9952QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
UltraLowOn-Resistance
Dual N and P Channel MOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
N-CHANNEL MOSFET
1
8
N-Ch P-Ch
D1
D1
S1
G1
2
7
VDSS 30V -30V
3
4
6
5
S2
G2
D2
D2
P-CHANNEL MOSFET
RDS(on) 0.10Ω 0.25Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Symbol
Maximum
Units
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
± 20
V
TA = 25°C
TA
3.5
70°C
-2.3
Continuous Drain Currentꢀ
ID
=
2.8-1.8
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
IDM
IS
16
1.7
-10
-1.3
TA = 25°C
Maximum Power Dissipation ꢀ
TA = 70°C
2.0
1.3
PD
W
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
44
57
mJ
A
2.0
-1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.25
mJ
V/ ns
°C
dv/dt
TJ,TSTG
5.0
-5.0
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient ꢀ
RθJA
62.5
°C/W
www.irf.com
1
07/23/07