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IRF9540 PDF预览

IRF9540

更新时间: 2024-11-06 22:51:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 63K
描述
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

IRF9540 数据手册

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IRF9540, RF1S9540SM  
Data Sheet  
July 1999  
File Number 2282.6  
19A, 100V, 0.200 Ohm, P-Channel Power  
MOSFETs  
Features  
• 19A, 100V  
These are P-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
convertors, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. They can be operated directly from  
integrated circuits.  
• r  
= 0.200Ω  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA17521.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
IRF9540  
RF1S9540  
D
IRF9540  
RF1S9540SM  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.  
S
Packaging  
JEDEC TO-220AB  
JEDEC TO-263AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
GATE  
DRAIN (FLANGE)  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-15  

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