IRF9540S

更新时间： 2024-11-19 21:54:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	198K
描述
HEXFET Power MOSFET

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中文翻译

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IRF9540S 数据手册

PD - 9.917A

IRF9540S

HEXFET^®Power MOSFET

^lSurface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Repetitive Avalanche Rated

l P Channel

V_DSS= -100V

R_DS(on)= 0.20Ω

l 175°C Operating Temperature

l Fast Switching

I_D= -19A

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SMD-220 is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The SMD-220 is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

SMD-220

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-19

-13

-72

P_D@T_C= 25°C

PowerDissipation

150

3.7

Power Dissipation (PCB Mount)**

LinearDeratingFactor

1.0

W/°C

Linear Derating Factor (PCB Mount)**

Gate-to-SourceVoltage

0.025

±20

640

-19

V_GS

E_AS

SinglePulseAvalancheEnergy

AvalancheCurrent

I_AR

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

JunctionandStorage Temperature Range

SolderingTemperature,for10seconds

V/ns

dv/dt

T_J,T_STG

-5.5

-55 to + 175

°C

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Min.

Typ.

Max.

1.0

Units

R_θJC

R_θJA

Junction-to-Ambient (PCBMount)**

°C/W

** When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

3/21/03

12 3 4 5 6

中文翻译

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