Datasheet > IRF9540S, SiHF9540S

IRF9540S, SiHF9540S

更新时间： 2024-10-31 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	201K
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Power MOSFET

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IRF9540S, SiHF9540S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• P-channel

Available

• 175 °C operating temperature

• Fast Switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

P-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

-100

DESCRIPTION

R_DS(on)()

V_GS= -10 V

0.20

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gmax. (nC)

_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface-mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF9540S-GE3

IRF9540SPbF

D²PAK (TO-263)

SiHF9540STRL-GE3 ^a

IRF9540STRLPbF ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C= 100 °C

-19

-13

-72

Continuous Drain Current

_GSat -10 V

I_D

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

0.025

640

-19

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Repetitive Avalanche Current ^a

E_AS

I_AR

E_AR

Repetitive Avalanche Energy ^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

150

3.7

-5.5

_C= 25 °C

P_D

V/ns

°C

dV/dt

T_J, T_stg

-55 to +175

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= -25 V, starting T_J= 25 °C, L = 2.7 mH, R_g= 25 , I_AS= -19 A (see fig. 12)

c. I_SD -19 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0943-Rev. D, 20-Sep-2021

Document Number: 91079

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF9540S, SiHF9540S相关器件

型号	品牌	获取价格	描述	数据表
IRF9540SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF9540STRL	VISHAY	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRF9540STRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRF9540STRR	VISHAY	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRF9540STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRF9541	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRF9541	HARRIS	获取价格	P-CHANNEL POWER MOSFETS
IRF9541	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 80V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal
IRF9542	HARRIS	获取价格	P-CHANNEL POWER MOSFETS
IRF9542	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS

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