Datasheet > IRF9540 (KRF9540)

IRF9540 (KRF9540)

更新时间： 2024-09-02 09:00:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	1835K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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IRF9540 (KRF9540) 数据手册

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DIP Type

MOSFET

P-Channel MOSFET

IRF9540 (KRF9540)

TO-220

2.54

± 0.20

10.16

0.20

ø3.18 ± 0.10

(0.70)

■ Features

● VDS (V) =-100V

(1.00x45

)

● ID =-19 A (VGS =-10V)

● R^DS(ON)＜ 200mΩ (VGS =-10V)

● Fast Switching

MAX1.47

0.80

0.10

● Ease of Paralleling

1 2

0.35

0.10

+0.10

–0.05

0.50

2.76 ± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

9.40 ± 0.20

1 Gate

2 Drain

3 Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-100

±20

-19

-13

-72

-19

Unit

Gate-Source Voltage

Tc= 25°C

Continuous Drain Current

Tc= 100°C

Pulsed Drain Current

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Peak Diode Recovery dV/dt

Power Dissipation

(Note.1)

(Note.2)

Tc= 25°C

640

-5.5

150

dv/dt

V/ns

Linear Derating Factor

W/℃

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

175

℃

Junction Storage Temperature Range

stg

-55 to 175

Note.1 :V^DD=-25V, starting T

=25°C, L=2.7mH, R

= 25Ω, IAS= -19A

Note.2 I^SD≤-19A, dI/dt≤200 A/μs, VDD≤VDS, T

≤175 °C.

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