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IRF9540NSTRR PDF预览

IRF9540NSTRR

更新时间: 2024-10-29 23:58:51
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页数 文件大小 规格书
10页 221K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-263AB

IRF9540NSTRR 数据手册

 浏览型号IRF9540NSTRR的Datasheet PDF文件第2页浏览型号IRF9540NSTRR的Datasheet PDF文件第3页浏览型号IRF9540NSTRR的Datasheet PDF文件第4页浏览型号IRF9540NSTRR的Datasheet PDF文件第5页浏览型号IRF9540NSTRR的Datasheet PDF文件第6页浏览型号IRF9540NSTRR的Datasheet PDF文件第7页 
PD - 91483C  
IRF9540NS/L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRF9540S)  
l Low-profile through-hole (IRF9540L)  
l 175°C Operating Temperature  
l Fast Switching  
l P-Channel  
l Fully Avalanche Rated  
Description  
D
VDSS = -100V  
RDS(on) = 0.117Ω  
G
ID = -23A  
S
FifthGenerationHEXFETsfromInternationalRectifierutilize  
advancedprocessingtechniquestoachieveextremelylow  
on-resistancepersiliconarea. Thisbenefit,combinedwith  
thefastswitchingspeedandruggedizeddevicedesignthat  
HEXFETPowerMOSFETsarewellknownfor,providesthe  
designerwithanextremely efficientandreliabledevicefor  
use in a wide variety of applications.  
The D2Pak is a surface mount power package capable of  
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest  
power capability and the lowest possible on-resistance in  
anyexistingsurfacemountpackage.TheD2Pakissuitable  
for high current applications because of its low internal  
connection resistance and can dissipate up to 2.0W in a  
typicalsurfacemountapplication.  
2
T O -262  
D
Pak  
The through-hole version (IRF9540L) is available for low-  
profileapplications.  
Absolute Maximum Ratings  
Parameter  
Max.  
-23  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10Vꢀ  
Continuous Drain Current, VGS @ -10Vꢀ  
Pulsed Drain Current ꢀ  
-16  
A
-76  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
3.8  
W
W
Power Dissipation  
140  
0.91  
± 20  
430  
-11  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
14  
mJ  
V/ns  
-5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
Max.  
1.1  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
40  
5/13/98  
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