PD - 91483C
IRF9540NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9540S)
l Low-profile through-hole (IRF9540L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
D
VDSS = -100V
RDS(on) = 0.117Ω
G
ID = -23A
S
FifthGenerationHEXFETsfromInternationalRectifierutilize
advancedprocessingtechniquestoachieveextremelylow
on-resistancepersiliconarea. Thisbenefit,combinedwith
thefastswitchingspeedandruggedizeddevicedesignthat
HEXFETPowerMOSFETsarewellknownfor,providesthe
designerwithanextremely efficientandreliabledevicefor
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest
power capability and the lowest possible on-resistance in
anyexistingsurfacemountpackage.TheD2Pakissuitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typicalsurfacemountapplication.
2
T O -262
D
Pak
The through-hole version (IRF9540L) is available for low-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
-23
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10Vꢀ
Continuous Drain Current, VGS @ -10Vꢀ
Pulsed Drain Current ꢀ
-16
A
-76
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
W
Power Dissipation
140
0.91
± 20
430
-11
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
14
mJ
V/ns
-5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
1.1
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
5/13/98