5秒后页面跳转
IRF9332PBF PDF预览

IRF9332PBF

更新时间: 2024-11-20 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 284K
描述
HEXFET Power MOSFET

IRF9332PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
雪崩能效等级(Eas):102 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):9.8 A
最大漏极电流 (ID):9.8 A最大漏源导通电阻:0.0175 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF9332PBF 数据手册

 浏览型号IRF9332PBF的Datasheet PDF文件第2页浏览型号IRF9332PBF的Datasheet PDF文件第3页浏览型号IRF9332PBF的Datasheet PDF文件第4页浏览型号IRF9332PBF的Datasheet PDF文件第5页浏览型号IRF9332PBF的Datasheet PDF文件第6页浏览型号IRF9332PBF的Datasheet PDF文件第7页 
PD - 97561  
IRF9332PbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
RDS(on) max  
(@VGS = -10V)  
17.5  
m
RDS(on) max  
(@VGS = -4.5V)  
28.1  
14  
m
Qg (typical)  
nC  
A
SO-8  
ID  
-9.8  
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
System/Load Switch  
Features and Benefits  
Features  
Resulting Benefits  
results in  
Industry-Standard SO-8 Package  
Multi-Vendor Compatibility  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Environmentally Friendlier  
Orderable part number  
Package Type  
Standard Pack  
Form Quantity  
Note  
IRF9332PbF  
IRF9332TRPbF  
SO8  
SO8  
Tube/Bulk  
Tape and Reel  
95  
4000  
Absolute Maximum Ratings  
Max.  
Parameter  
Drain-to-Source Voltage  
Units  
VDS  
-30  
±20  
-9.8  
-7.8  
-80  
2.5  
V
VGS  
Gate-to-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
W
W/°C  
°C  
1.6  
0.02  
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
TJ  
-55 to + 150  
TSTG  
Storage Temperature Range  
Notes  through † are on page 2  
www.irf.com  
1
09/01/2010  

IRF9332PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9332TRPBF INFINEON

类似代替

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M

与IRF9332PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF9332TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M
IRF9333PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9335 INFINEON

获取价格

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF9335PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9358 INFINEON

获取价格

-30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF9358PBF INFINEON

获取价格

Charge and Discharge Switch for Notebook PC Battery Application
IRF9358TRPBF INFINEON

获取价格

Charge and Discharge Switch for Notebook PC Battery Application
IRF9362 INFINEON

获取价格

-30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF9362PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9362PBF_1 INFINEON

获取价格

HEXFETPower MOSFET Industry-Standard SO-8 Package