5秒后页面跳转
IRF840S PDF预览

IRF840S

更新时间: 2024-11-24 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 1040K
描述
Power MOSFET

IRF840S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:TO-263, 3 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF840S 数据手册

 浏览型号IRF840S的Datasheet PDF文件第2页浏览型号IRF840S的Datasheet PDF文件第3页浏览型号IRF840S的Datasheet PDF文件第4页浏览型号IRF840S的Datasheet PDF文件第5页浏览型号IRF840S的Datasheet PDF文件第6页浏览型号IRF840S的Datasheet PDF文件第7页 
IRF840S, SiHF840S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Surface Mount  
500  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.85  
RoHS*  
Qg (Max.) (nC)  
63  
9.3  
COMPLIANT  
• Repetitive Avalanche Rated  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
32  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirement  
• Lead (Pb)-free Available  
D
D2PAK (TO-263)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The SMD-220 is a surface mount power package capable of  
accommodating die size up to HEX-4. It provides the highest  
power capability and the lowest possible on-resistance in  
any existing surface mount package. The SMD-220 is  
suitable for high current applications because of its low  
internal connection resistance and can dissipate up to 2.0 W  
in a typical surface mount application.  
D
G
S
N-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRF840SPbF  
D2PAK (TO-263)  
IRF840STRLPbFa  
SiHF840STL-E3a  
IRF840STRaL  
D2PAK (TO-263)  
IRF840STRRPbFa  
SiHF840STR-E3a  
IRF840STRa  
Lead (Pb)-free  
SiHF840S-E3  
IRF840S  
SiHF840S  
SnPb  
SiHF840STLa  
SiHF840STRa  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
500  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
8.0  
Continuous Drain Current  
V
GS at 10 V  
ID  
TC =100°C  
5.1  
A
Pulsed Drain Currenta  
IDM  
32  
Linear Derating Factor  
1.0  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
0.025  
510  
EAS  
IAR  
mJ  
A
8.0  
Repetiitive Avalanche Energya  
EAR  
13  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
125  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
dV/dt  
3.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).  
c. ISD 8.0 A, dI/dt 100 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91071  
S-81432-Rev. A, 07-Jul-08  
www.vishay.com  
1

IRF840S 替代型号

型号 品牌 替代类型 描述 数据表
STB11NK50ZT4 STMICROELECTRONICS

功能相似

N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220

与IRF840S相关器件

型号 品牌 获取价格 描述 数据表
IRF840S (KRF840S) KEXIN

获取价格

N-Channel MOSFET
IRF840S, SiHF840S VISHAY

获取价格

Power MOSFET
IRF840SPBF VISHAY

获取价格

Power MOSFET
IRF840SPBF INFINEON

获取价格

HEXFET Power MOSFET
IRF840STR VISHAY

获取价格

Power MOSFET
IRF840STRL VISHAY

获取价格

Power MOSFET
IRF840STRLPBF VISHAY

获取价格

Power MOSFET
IRF840STRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840STRR INFINEON

获取价格

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF840STRR VISHAY

获取价格

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta