Datasheet > IRF840S, SiHF840S

IRF840S, SiHF840S

更新时间： 2024-11-03 14:55:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	192K
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Power MOSFET

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IRF840S, SiHF840S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirement

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

DESCRIPTION

500

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

_DS(on)(Ω)

V_GS= 10 V

0.85

Q_gmax. (nC)

9.3

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF840S-GE3

IRF840SPbF

D²PAK (TO-263)

SiHF840STRL-GE3 ^a

IRF840STRLPbF ^a

D²PAK (TO-263)

SiHF840STRR-GE3 ^a

IRF840STRRPbF ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

8.0

Continuous Drain Current

_GSat 10 V

I_D

T_C= 100 °C

5.1

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Avalanche Current ^a

0.025

510

E_AS

I_AR

8.0

Repetitive Avalanche Energy ^a

E_AR

Maximum Power Dissipation

T_C= 25 °C

125

P_D

V/ns

°C

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

T_A= 25 °C

3.1

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_g= 25 Ω, I_AS= 8.0 A (see fig. 12)

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0904-Rev. E, 30-Aug-2021

Document Number: 91071

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF840S, SiHF840S相关器件

型号	品牌	获取价格	描述	数据表
IRF840SPBF	VISHAY	获取价格	Power MOSFET
IRF840SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF840STR	VISHAY	获取价格	Power MOSFET
IRF840STRL	VISHAY	获取价格	Power MOSFET
IRF840STRLPBF	VISHAY	获取价格	Power MOSFET
IRF840STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840STRR	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF840STRR	VISHAY	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
IRF840STRRPBF	VISHAY	获取价格	Power MOSFET

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